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| Semiconductor IRF9230, IRF9231, IRF9232, IRF9233 -5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm, P-Channel Power MOSFETs Description These devices are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly Developmental type TA17512. January 1998 Features * -5.5A and -6.5A, -150V and -200V * rDS(ON) = 0.8 and 1.2 * Single Pulse Avalanche Energy Rated * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteristics * High Input Impedance * Related Literature - TB334, "Guidelines for Soldering Surface Mount Components to PC Boards" Symbol Ordering Information D PART NUMBER IRF9230 IRF9231 IRF9232 IRF9233 PACKAGE TO-204AA TO-204AA TO-204AA TO-204AA BRAND IRF9230 IRF9231 IRF9232 IRF9233 S G NOTE: When ordering, use the entire part number. Packaging JEDEC TO-204AA DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1) CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright (c) Harris Corporation 1997 File Number 2226.1 6-1 IRF9230, IRF9231, IRF9232, IRF9233 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRF9230 -200 -200 -6.5 -4.0 -26 20 75 0.6 500 -55 to 150 300 260 IRF9231 -150 -150 -6.5 -4.0 -26 20 75 0.6 500 -55 to 150 300 260 IRF9232 -200 -200 -5.5 -3.5 -22 20 75 0.6 500 -55 to 150 300 260 IRF9233 -150 -150 -5.5 -3.5 -22 20 75 0.6 500 -55 to 150 300 260 UNITS V V A A A V W W/oC mJ oC oC oC Drain to Source Breakdown Voltage (Note 1). . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . VDGRVGS Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . .IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . EAS Operating and Storage Temperature . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . .TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . Tpkg CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to TJ = 125oC. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS TEST CONDITIONS ID = -250A, VGS = 0V, (Figure10) -200 -150 VGS(TH) IDSS VGS = VDS, ID = -250A VDS = Rated BVDSS, VGS = 0V VDS = 0.8 x Rated BVDSS, VGS = 0V TC = 125oC -2 -4 -25 -250 V V V A A MIN TYP MAX UNITS Drain to Source Breakdown Voltage IRF9230, IRF9232 IRF9231, IRF9233 Gate Threshold Voltage Zero Gate Voltage Drain Current On-State Drain Current (Note 2) IRF9230, IRF9231 IRF9232, IRF9233 Gate to Source Leakage Current Drain to Source On Resistance (Note 2) IRF9230, IRF9231 IRF9232, IRF9233 Forward Transconductance (Note 2) ID(ON) VDS > ID(ON) x rDS(ON) MAX, VGS = -10V, (Figure 7) -6.5 -5.5 - 100 A A nA IGSS rDS(ON) VGS = 20V ID = -3.5A, VGS = -10V, (Figures 8, 9) - gfs td(ON) tr td(OFF) tf Qg(TOT) Qgs Qgd VDS > ID(ON) x rDS(ON) MAX, ID = -3.5A, (Figure 12) VDD = 0.5 x Rated BVDSS, ID -6.5A, RG = 50, VGS = -10V, (Figure 17, 18) RL = 14.7 for VDSS = 200V RL = 10.9 for VDSS = 150V MOSFET Switching Times are Essentially Independent of Operating Temperature VGS = -10V, ID = -6.5A, VDS = 0.8 x Rated BVDSS, (Figures 14, 19, 20) Gate Charge is Essentially Independent of Operating Temperature 2.2 0.5 0.8 3.5 0.8 1.2 - S Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate to Source + Gate to Drain) Gate to Source Charge Gate to Drain "Miller" Charge - 30 50 50 40 31 50 100 100 80 45 ns ns ns ns nC - 18 13 - nC nC 6-2 IRF9230, IRF9231, IRF9232, IRF9233 Electrical Specifications PARAMETER Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Drain Inductance TC = 25oC, Unless Otherwise Specified (Continued) SYMBOL CISS COSS CRSS LD Measured Between the Contact Screw on the Flange that is Closer to Source and Gate Pins and the Center of Die Measured From the Source Lead, 6mm (0.25in) From the Flange and the Source Bonding Pad Modified MOSFET Symbol Showing the Internal Devices Inductances D LD G LS S TEST CONDITIONS VDS = -25V, VGS = 0V, f = 1MHz, (Figure 11) MIN - TYP 550 170 50 5.0 MAX - UNITS pF pF pF nH Internal Source Inductance LS - 12.5 - nH Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient RJC RJA Typical Socket Mount - - 1.67 60 oC/W oC/W Source to Drain Diode Specifications PARAMETER Continuous Source to Drain Current Pulse Source to Drain Current (Note 3) SYMBOL ISD ISDM TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode G D MIN - TYP - MAX -6.5 -26 UNITS A A S Source to Drain Diode Voltage (Note 2) Reverse Recovery Time Reverse Recovery Charge NOTES: VSD trr QRR TC = 25oC, ISD = -6.5A, VGS = 0V, (Figure 13) TJ = 150oC, ISD = -6.5A, dISD/dt = 100A/s TJ = 150oC, ISD = -6.5A, dISD/dt = 100A/s - 400 2.6 -1.5 - V ns C 2. Pulse test: pulse width 300s, duty cycle 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 50V, starting TJ = 25oC, L = 17.75mH, RG = 25, peak IAS = 6.5A (Figures 15, 16). 6-3 IRF9230, IRF9231, IRF9232, IRF9233 Typical Performance Curves 1.2 POWER DISSIPATION MULTIPLIER 1.0 0.8 ID, DRAIN CURRENT (A) Unless Otherwise Specified -10 -8 -6 IRF9230, IRF9231 0.6 0.4 -4 IRF9232, IRF9233 -2 0.2 0.0 0 25 50 75 100 TA , CASE TEMPERATURE (oC) 125 150 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE ZJC, NORMALIZED TRANSIENT THERMAL IMPEDANCE (oC/W) 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE PDM 0.01 10-5 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC 10-3 10-2 10-1 1 10 t1 t2 10-4 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE -100 IRF9230, 1 ID, DRAIN CURRENT (A) IRF9232, 3 -10 IRF9230, 1 IRF9232, 3 1ms -1 10ms 100ms DC TC = 25oC TJ = MAX RATED IRF9231, 3 IRF9230, 2 -1000 OPERATION IN THIS AREA IS LIMITED BY rDS(ON) ID, DRAIN CURRENT (A) -15 VGS = -10V -12 VGS = -9V VGS = -8V VGS = -7V 80s PULSE TEST 10s 100s -9 VGS = -6V -6 -3 VGS = -5V VGS = -4V -0.1 -1 0 -10 -100 VDS, DRAIN TO SOURCE VOLTAGE (V) 0 -10 -20 -30 -40 -50 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS 6-4 IRF9230, IRF9231, IRF9232, IRF9233 Typical Performance Curves -15 ID(ON), ON-STATE DRAIN CURRENT (A) 80sPULSE TEST -12 VGS = -10V VGS = -9V -9 VGS = -8V VGS = -7V VGS = -6V Unless Otherwise Specified (Continued) -15 80s PULSE TEST VDS I D(ON) x rDS(ON) MAX -12 TJ = 125oC TJ = 25oC TJ = -55oC ID, DRAIN CURRENT (A) -9 -6 -6 -3 VGS = -5V VGS = -4V -3 0 0 -2 -4 -6 -8 -10 0 0 -2 -4 -6 -8 VGS, GATE TO SOURCE VOLTAGE (V) -10 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 6. SATURATION CHARACTERISTICS FIGURE 7. TRANSFER CHARACTERISTICS DRAIN TO SOURCE ON RESISTANCE () 2.0 2.0s PULSE TEST 1.6 NORMALIZED DRAIN TO SOURCE ON RESISTANCE 2.5 VGS = -10V, ID = -2.0A 2.0 1.2 VGS = - 10V 0.8 VGS = - 20V 1.5 1.0 0.4 0.5 0 0 -5 -10 -15 ID, DRAIN CURRENT (A) -20 -25 0 -40 0 40 80 120 160 TJ , JUNCTION TEMPERATURE (oC) NOTE: Heating effect of 2s pulse is minimal. FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT 1.25 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE ID = 250A 1.15 FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 2000 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGD 1600 C, CAPACITANCE (pF) 1.05 1200 0.95 800 CISS 0.85 400 CRSS COSS 0.75 -40 0 40 80 120 160 0 0 -10 -20 -30 -40 -50 TJ , JUNCTION TEMPERATURE (oC) VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 6-5 IRF9230, IRF9231, IRF9232, IRF9233 Typical Performance Curves 7.0 gfs, TRANSCONDUCTANCE (S) 80s PULSE TEST VDS > ID(ON) x rDS(ON)MAX TJ = -55oC 4.2 TJ = 25oC TJ = 125oC ISD, DRAIN CURRENT (A) 5.6 TJ = 150oC Unless Otherwise Specified (Continued) -100 -10 2.8 -1.0 TJ = 25oC 1.4 0 0 -3 -6 -9 -12 -15 -0.1 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 I D , DRAIN CURRENT (A) VSD, SOURCE TO DRAIN VOLTAGE (V) FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE 0 VGS, GATE TO SOURCE VOLTAGE (V) ID = -6.5A FOR TEST CIRCUIT SEE FIGURES 19, 20 -5 -10 IRF9230, IRF9232 VDS = -160V VDS = -100V VDS = -40V -15 0 8 16 24 32 Qg(TOT), TOTAL GATE CHARGE (nC) 40 FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE 6-6 IRF9230, IRF9231, IRF9232, IRF9233 Test Circuits and Waveforms VDS tAV 0 VARY tP TO OBTAIN REQUIRED PEAK IAS RG L + VDD 0V VGS DUT tP IAS 0.01 VDD IAS tP BVDSS VDS FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS tON td(ON) tr RL 0 10% tOFF td(OFF) tf 10% DUT VGS RG VDD + VDS VGS 0 90% 90% 10% 50% PULSE WIDTH 90% 50% FIGURE 17. SWITCHING TIME TEST CIRCUIT FIGURE 18. RESISTIVE SWITCHING WAVEFORMS CURRENT REGULATOR -VDS (ISOLATED SUPPLY) 0 VDS DUT 12V BATTERY 0.2F 50k 0.3F Qgs D G 0 IG(REF) IG CURRENT SAMPLING RESISTOR S +VDS ID CURRENT SAMPLING RESISTOR 0 DUT Qgd VGS Qg(TOT) VDD IG(REF) FIGURE 19. GATE CHARGE TEST CIRCUIT FIGURE 20. GATE CHARGE WAVEFORMS 6-7 |
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